Understanding deposition rate loss in high power impulse magnetron sputtering
نویسندگان
چکیده
The lower deposition rate for high power impulse magnetron sputtering (HiPIMS) compared to direct current magnetron sputtering for the same average power is often reported as a drawback. The often invoked reason is back-attraction of ionized sputtered material to the target, due to a substantial negative potential profile from the location of ionization towards the cathode. Emitting and swept Langmuir probes have yielded spaceand time resolved electric potential profiles and electron energy distributions, Rogowski coils have been used to obtain current density distributions. Also, spaceand time resolved, and fast imaging techniques show how the time evolution of the discharge structure varies with gas pressure and species. This combined data set is here used to benchmark two different types of plasma models for different regions of the HiPIMS discharges, with special focus on the problem of electric fields z E in the high density plasma region and their effect on the transport of ionized sputtered material. We propose two different mechanisms to be dominating in different regions: “ionization driven” , z ioniz E in a rather stable ionization region extending a few cm from the target, and “transport driven” , z trans E in the highly dynamic surrounding bulk plasma.
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J. T. Gudmundsson, N. Brenning, Daniel Lundin and Ulf Helmersson, High power impulse magnetron sputtering discharge, 2012, Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, (30), 030801. http://dx.doi.org/10.1116/1.3691832 Copyright: American Vacuum Society, This article may be downloaded for personal use only. Any other use requires prior permission of the author and the ...
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